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    • Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 

      Isa, F.; Salvalaglio, M.; Dasilva, Y. A. R.; Meduna, M.; Barget, M.; Jung, A.; et al. (2016)
      An experiment has demonstrated that truly dislocation free SiGe crystals with widths of at least 5?m can be epitaxially grown on Si substrates by applying the compositional grading developed for layers to 3D structures. ...