Browsing by Author "Ingenito, A."

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A passivating contact concept compatible with a short thermal treatment

Ingenito, A.; Allebe, C.; Nogay, G.; Horzel, J.; Wyss, P.; Stuckelberger, J. A.; et al. (2018)

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of ...
A passivating contact for silicon solar cells formed during a single firing thermal annealing

Ingenito, A.; Nogay, G.; Jeangros, Q.; Rucavado, E.; Allebe, C.; Eswara, S.; et al. (2018)

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. ...
Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Ingenito, A.; Nogay, G.; Stuckelberger, J.; Wyss, P.; Gnocchi, L.; Allebé, C.; Horzel, J.; Despeisse, M.; Haug, F.-J.; Löper, P.; Ballif, C. (2019)

We present an electron selective passivating contact based on a tunneling SiO. capped with a phosphorous doped silicon carbide and prepared with a high-temperature thermal anneal. We investigate in detail the effects of ...