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1 cm(2) CH3NH3PbI3 mesoporous solar cells with 17.8% steady-state efficiency by tailoring front FTO electrodes
Afzaal, M.; Yates, H. M.; Walter, A.; Nicolay, S.; Ballif, C. (2017)In this article, we investigate the effects of atmospheric-pressure chemical vapour deposited fluorine doped tin oxide (FTO) thin films as front electrodes for the fabrication of mesoporous perovskite solar cells with an ... -
1, 2, 3, Fork: Counter Mode Variants based on a Generalized Forkcipher
Andreeva, E.; Bhati, A. S.; Preneel, B.; Vizár, D. (2021-09) -
1.1 ps pulse-on-demand generation in tandem-cavity InGaN laser
Boiko, Dmitri L.; Zeng, Xi; Weig, Thomas; Schwarz, Ulrich T.; Sulmoni, Luca; Lamy, Jean-Michel; Grandjean, Nicolas (2012) -
1/f noise in external-cavity InGaN diode laser at 420  nm wavelength for atomic spectroscopy
Zeng, Xi; Boiko, Dmitri L. (2014-03-15)We have extensively studied the frequency noise and relative intensity noise spectra in a tunable external-cavity InGaN diode laser at blue (420 nm) wavelengths. We report flicker (1/f) frequency-noise behavior at low ... -
100-attosecond timing jitter from low-noise passively mode-locked solid-state laser
Portuondo, Erwin; Paschotta, Rüdiger; Lecomte, Steve (2014) -
2016_Kjelberg_Thermo-Mechanical Design.pdf
Kjelberg, Ivar (2016-09-05) -
22% Efficient Dopant-free Interdigitated Back Contact Silicon Solar Cells
Wu, W. L.; Lin, W. J.; Zhong, S. H.; Paviet-Salomon, B.; Despeisse, M.; Liang, Z. C.; et al. (2018)In this study, we present dopant-free back contact heterojunction silicon solar cells employing MoOx and MgFx based stacks as hole-and electron-selective contacts deposited using a thermal evaporation process at low ... -
22.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-si(n) passivating contact
Ingenito, A.; Allebé, C.; Libraro, S.; Ballif, C.; Paviet-Salomon, B.; Nicolay, S.; Diaz Leon, J. J. (2023-01) -
25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a p-type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts
Nogay, G.; Sahli, F.; Werner, J.; Monnard, R.; Boccard, M.; Despeisse, M.; et al. (2019)A monolithic two-terminal perovskite/silicon tandem solar cell based on an industrial, high-temperature tolerant p-type crystalline silicon bottom cell with a steady-state power conversion efficiency of 25.1% is demonstrated. -
3D Printed Antennas for MM-Wave sensing applications
Vorobyov, Alexander; Farserotu, John (2016-09-03)In this paper, three low cost 3D printed antenna concepts for integration with a mm-wave miniature platform are presented. Proposed antenna solutions are optimized to operate in mm-wave ISM band (122GHz-123GHz). Different ... -
3d Printing on MEMS: Integration of 3d Shock Stopper on a Micro Mirror
Lani, S.; Chandran, O.; Auchlin, M.; Marozau, I.; Dunan, B. (2019)We have developed a polymer-based 3D shock stopper and absorber based on micro stereolithography technology that is integrated onto a prefabricated wafer of a MEMS micro mirror used as a high-power laser steering system. ... -
4D Heart Model Helps Unveiling Contributors to Cardiac EIT Signal
Braun, Fabian; Proença, Martin; Rapin, Michael; Alba, Xenia; Lekadir, Karim; Lemay, Mathieu; Solà, Josep; Frangi, Alejandro F.; Thiran, Jean-Philippe (2015) -
6 design principles for SLM-based compliant mechanisms
Kruis, Johan; Cosandier, Florent; Perruchoud, Gérald; Kiener, Lionel; Saudan, Hervé (2019-09) -
6 DOF repeatability measurement setup for measuring position of assembled silicon parts with nanometric resolution.
Kruis, Johan; Gentsch, Pascal; Theiler, Pius; Barrot, François; Cosandier, Florent; Henein, Simon (2015-06-06)This article presents a test setup dedicated to the measurement of the 6 degrees of freedom relative positioning assembly repeatability of three micro-manufactured parts equivalent to those composing a mesoscale flexure-based ... -
A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI
Chicco, F.; Cerida Rengifo, S.; Le Roux, E.; Enz, C. C. (2021-09) -
9.6 GHz ultra-low phase noise signal generation from a diode-pumped solid-state laser
Portuondo-Campa, Erwin; Buchs, Gilles; Kundermann, Stefan; Lecomte, Steve (2015-10)We present ultra-low phase noise microwave generation based on a photonics oscillator. By using an ultra-narrow linewidth continuous-wave laser stabilized on a high-finesse optical cavity as a frequency reference, an optical ... -
A 0.5 V 2.5 uW/MHz Microcontroller with Analog-Assisted Adaptive Body Bias PVT Compensation with 3.13nW/kB SRAM Retention in 55nm Deeply-Depleted Channel CMOS
Pons, M.; Müller, C. T.; Ruffieux, D.; Nagel, J.; Emery, S.; Burg, A.; Tanahashi, S.; Tanaka, Y.; Takeuchi, A. (2019)Microcontroller systems operating at low supply voltage in near or sub-threshold regime suffer both from increased effects of PVT (Process, Voltage, Temperature) variation and from a larger share of leakage on overall power ... -
A 100 kb/s, 4 GHz, 267 mu W Fully Integrated Low Power FM-UWB Transceiver with Multiple Channels
Kopta, V.; Enz, C. (2018)A 4 GHz, 100 kb/s FM-UWB transceiver for short-range communications in a body area network is presented. Two receivers and a transmitter use the same RF port with a fully-integrated matching network. The first receiver ... -
A 1kb single-side read 6T sub-threshold SRAM in 180 nm with 530 Hz frequency 3.1 nA total current and 2.4 nA leakage at 0.27 V
Pons, M.; Thanh-Chau Le, C.; Arm, C.; Severac, D. (2015)A 1kb 180 nm single-side read 6T sub-threshold SRAM has been designed focusing on manufacturability, integrated and measured satisfactorily. Silicon measurements show 3.1 nA total current, 2.4 nA leakage, at 530 Hz for a ... -
A 20 Channel EMG SoC with an Integrated 32b RISC Core for Real-Time Wireless Prosthetic Control
Sole, M. P.; Badami, K.; Deng, J.; Mavrogordatos, T.; Azarkhish, E.; Zahnd, L.; Cosentino, C.; Augustyniak, M.; Zha, Y.; Bischof, A.; Bergamini, L.; Dallemagne, P.; Emery, S. (2019)This work introduces a highly integrated and a power-efficient SoC with 20 EMG sensing channels, a 32b RISC core with a host of peripherals and a companion RF transceiver chip in the 55 nm CMOS technology to enable real-time ...