Browsing by Author "Allebe, C."
Now showing items 1-11 of 11
-
A passivating contact concept compatible with a short thermal treatment
Ingenito, A.; Allebe, C.; Nogay, G.; Horzel, J.; Wyss, P.; Stuckelberger, J. A.; et al. (2018)In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of ... -
A passivating contact for silicon solar cells formed during a single firing thermal annealing
Ingenito, A.; Nogay, G.; Jeangros, Q.; Rucavado, E.; Allebe, C.; Eswara, S.; et al. (2018)Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. ... -
Advanced Silicon Thin Films for High-Efficiency Silicon Heterojunction-Based Solar Cells
Descoeudres, A.; Allebe, C.; Badel, N.; Barraud, L.; Champliaud, J.; Christmann, G.; et al. (2017)The drop in passivation usually observed after the deposition of the p-doped amorphous silicon (a-Si:11) layer on top of the passivating intrinsic buffer a-Si:H layer during the fabrication of silicon heterojunction (SHJ) ... -
Aluminium-Doped Zinc Oxide Rear Reflectors for High-Efficiency Silicon Heterojunction Solar Cells
Senaud, L.-L.; Christmann, G.; Descoeudres, A.; Geissbuhler, J.; Barraud, L.; Badel, N.; Allebe, C.; Nicolay, S.; Despeisse, M.; Paviet-Salomon, B.; Ballif, C. (2019)This contribution demonstrates an improved infrared response of the rear reflector of monofacial silicon heterojunction solar cells using aluminium-doped zinc oxide (AZO) in lieu of indium tin oxide (ITO) in the back ... -
Engineering of Thin-Film Silicon Materials for High Efficiency Crystalline Silicon Solar Cells
Despeisse, M.; Barraud, L.; Paviet-Salomon, B.; Descoeudres, A.; Senaud, L. L.; Allebe, C.; et al. (2018)Thin-film silicon layers deposited in parallel-plate PECVD reactors can be produced with varying microstructure, composition and properties, depending on deposition process conditions and on the underlying substrate ... -
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
Nogay, G.; Stuckelberger, J.; Wyss, P.; Rucavado, E.; Allebe, C.; Koida, T.; et al. (2017)We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based ... -
Low-temperature processes for passivation and metallization of high-efficiency crystalline silicon solar cells
Descoeudres, A.; Allebe, C.; Badel, N.; Barraud, L.; Champliaud, J.; Christmann, G.; et al. (2018)This paper reviews recent progress made at CSEM on the development of low-temperature processes for the fabrication of amorphous silicon-based passivated contacts and for the metallization of high-efficiency silicon ... -
Mechanically stacked 4-terminal III-V/Si tandem solar cells
Essig, S.; Allebe, C.; Geisz, J. F.; Steiner, M. A.; Barraud, L.; Descoeudres, A.; et al. (2017)We developed 4-terminal III-V/Si dual-junction solar cells that reach certified record 1-sun efficiencies over 32%. These efficiency values exceed the theoretical efficiency limit of single-junction solar cells and prove ... -
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, C.; Debrot, F.; et al. (2016)We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses ... -
Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
Essig, S.; Allebe, C.; Remo, T.; Geisz, J. F.; Steiner, M. A.; Horowitz, K.; et al. (2017)Today''s dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which ... -
Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells
Nogay, G.; Stuckelberger, J.; Wyss, P.; Jeangros, Q.; Allebe, C.; Niquille, X.; et al. (2016)The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative ...