Browsing by Author "Christmann, G."
Now showing items 1-14 of 14
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Advanced Silicon Thin Films for High-Efficiency Silicon Heterojunction-Based Solar Cells
Descoeudres, A.; Allebe, C.; Badel, N.; Barraud, L.; Champliaud, J.; Christmann, G.; et al. (2017)The drop in passivation usually observed after the deposition of the p-doped amorphous silicon (a-Si:11) layer on top of the passivating intrinsic buffer a-Si:H layer during the fabrication of silicon heterojunction (SHJ) ... -
Aluminium-Doped Zinc Oxide Rear Reflectors for High-Efficiency Silicon Heterojunction Solar Cells
Senaud, L.-L.; Christmann, G.; Descoeudres, A.; Geissbuhler, J.; Barraud, L.; Badel, N.; Allebe, C.; Nicolay, S.; Despeisse, M.; Paviet-Salomon, B.; Ballif, C. (2019)This contribution demonstrates an improved infrared response of the rear reflector of monofacial silicon heterojunction solar cells using aluminium-doped zinc oxide (AZO) in lieu of indium tin oxide (ITO) in the back ... -
Complex Refractive Indices of Cesium-Formamidinium-Based Mixed-Halide Perovskites with Optical Band Gaps from 1.5 to 1.8 eV
Werner, J.; Nogay, G.; Sahli, F.; Yang, T. C. J.; Brauninger, M.; Christmann, G.; et al. (2018)Cesium-formamidinium-based mixed-halide perovskite materials with optical band gaps ranging from 1.5 to 1.8 eV are investigated by variable-angle spectroscopic ellipsometry. The determined complex refractive indices are ... -
Interdigitated back contact silicon heterojunction solar cells featuring an interband tunnel junction enabling simplified processing
Paviet-Salomon, B.; Tomasi, A.; Lachenal, D.; Badel, N.; Christmann, G.; Barraud, L.; et al. (2018)This paper reports on the development of an innovative back-contacted crystalline silicon solar cell with passivating contacts featuring an interband tunnel junction at its electron-collecting contacts. In this novel ... -
Lateral transport in silicon solar cells
Haschke, J.; Christmann, G.; Messmer, C.; Bivour, M.; Boccard, M.; Ballif, C. (2020-03) -
Light-induced performance increase of silicon heterojunction solar cells
Kobayashi, E.; De Wolf, S.; Levrat, J.; Christmann, G.; Descoeudres, A.; Nicolay, S.; et al. (2016)Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate ... -
Low-temperature processes for passivation and metallization of high-efficiency crystalline silicon solar cells
Descoeudres, A.; Allebe, C.; Badel, N.; Barraud, L.; Champliaud, J.; Christmann, G.; et al. (2018)This paper reviews recent progress made at CSEM on the development of low-temperature processes for the fabrication of amorphous silicon-based passivated contacts and for the metallization of high-efficiency silicon ... -
Low-Temperature Screen-Printed Metallization for the Scale-Up of Two-Terminal Perovskite-Silicon Tandems
Kamino, B. A.; Paviet-Salomon, B.; Moon, S. J.; Badel, N.; Levrat, J.; Christmann, G.; et al. (2019)Tandem photovoltaic devices based on perovskite and crystalline silicon (PK/c-Si) absorbers have the potential to push commercial silicon single junction devices beyond their current efficiency limit. However, their scale-up ... -
Palliating the efficiency loss due to shunting in perovskite/silicon tandem solar cells through modifying the resistive properties of the recombination junction
Blaga, C.; Christmann, G.; Boccard, M.; Ballif, C.; Nicolay, S.; Kamino, B. A. (2021-01) -
Patterning Techniques for Copper Electoplated Metallization of Silicon Heterojunction Cells
Lachowicz, A.; Andreatta, G.; Blondiaux, N.; Faes, A.; Diaz Leon, J.; Christmann, G.; Allebé, C.; Fontaine, C.; Haumesser, P.-H.; Jourdan, J.; Muñoz, D.; Godard, M.; Darnon, M.; Nicolay, S.; Despeisse, M.; Ballif, C. (2021-06) -
Piezoelectric and structural properties of c-axis textured aluminium scandium nitride thin films up to high scandium content
Mertin, S.; Heinz, B.; Rattunde, O.; Christmann, G.; Dubois, M. A.; Nicolay, S.; et al. (2018)Partial substitution of aluminium by scandium in the wurtzite structure of aluminium nitride (AIN) leads to a large increase of the piezc electric response by more than a factor of 2. Therefore, aluminium scandium nitride ... -
Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth
Tomasi, A.; Paviet-Salomon, B.; Jeangros, Q.; Haschke, J.; Christmann, G.; Barraud, L.; et al. (2017)For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron ... -
Sputter deposition technology for Al(1?x)ScxN films with high Sc concentration
Heinz, B.; Mertin, S.; Rattunde, O.; Dubois, M. A.; Nicolay, S.; Christmann, G.; et al. (2017)Aluminium scandium nitride (Al1-xScxN) with its strongly enhanced piezoelectric response is the upcoming piezoelectric material of choice in next generation RF filters, sensors, actuators and energy harvesting devices. ... -
The versatility of passivating carrier-selective silicon thin films for diverse high-efficiency screen-printed heterojunction-based solar cells
Descoeudres, A.; Horzel, J.; Paviet-Salomon, B.; Senaud, L. L.; Christmann, G.; Geissbuhler, J.; et al. (2020-02)