Browsing by Author "Ingenito, A."
Now showing items 1-8 of 8
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22.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-si(n) passivating contact
Ingenito, A.; Allebé, C.; Libraro, S.; Ballif, C.; Paviet-Salomon, B.; Nicolay, S.; Diaz Leon, J. J. (2023-01) -
A passivating contact concept compatible with a short thermal treatment
Ingenito, A.; Allebe, C.; Nogay, G.; Horzel, J.; Wyss, P.; Stuckelberger, J. A.; et al. (2018)In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of ... -
A passivating contact for silicon solar cells formed during a single firing thermal annealing
Ingenito, A.; Nogay, G.; Jeangros, Q.; Rucavado, E.; Allebe, C.; Eswara, S.; et al. (2018)Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. ... -
Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts
Haug, F. -J.; Libraro, S.; Lehmann, M.; Morisset, A.; Ingenito, A.; Ballif, C. (2022-05) -
In situ reflectometry and diffraction investigation of the multiscale structure of p-type polysilicon passivating contacts for c-si solar cells
Morisset, A.; Famprikis, T.; Haug, F.-J.; Ingenito, A.; Ballif, C.; Bannenberg, L. J. (2022-03) -
Localisation of front side passivating contacts for direct metallisation of high-efficiency c-si solar cells
Meyer, F.; Ingenito, A.; Diaz Leon, J. J.; Niquille, X.; Allebé, C.; Nicolay, S.; Ballif, C. (2022-01) -
Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells
Ingenito, A.; Nogay, G.; Stuckelberger, J.; Wyss, P.; Gnocchi, L.; Allebé, C.; Horzel, J.; Despeisse, M.; Haug, F.-J.; Löper, P.; Ballif, C. (2019)We present an electron selective passivating contact based on a tunneling SiO. capped with a phosphorous doped silicon carbide and prepared with a high-temperature thermal anneal. We investigate in detail the effects of ... -
Sputtered polySi(n) passivating contacts compatible with direct metallization
Diaz Leon, J. J.; Libraro, S.; Ingenito, A.; Allebé, C.; Hübner, S.; Dippell, T.; Paviet-Salomon, B. (2022-11)