Browsing by Author "Nogay, G."
Now showing items 1-11 of 11
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25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a p-type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts
Nogay, G.; Sahli, F.; Werner, J.; Monnard, R.; Boccard, M.; Despeisse, M.; et al. (2019)A monolithic two-terminal perovskite/silicon tandem solar cell based on an industrial, high-temperature tolerant p-type crystalline silicon bottom cell with a steady-state power conversion efficiency of 25.1% is demonstrated. -
A Mixed-Phase SiOx Hole Selective Junction Compatible with High Temperatures Used in Industrial Solar Cell Manufacturing
Wyss, P.; Stuckelberger, J.; Nogay, G.; Horzel, J.; Jeangros, Q.; Mack, I.; et al. (2020-11) -
A passivating contact concept compatible with a short thermal treatment
Ingenito, A.; Allebe, C.; Nogay, G.; Horzel, J.; Wyss, P.; Stuckelberger, J. A.; et al. (2018)In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of ... -
A passivating contact for silicon solar cells formed during a single firing thermal annealing
Ingenito, A.; Nogay, G.; Jeangros, Q.; Rucavado, E.; Allebe, C.; Eswara, S.; et al. (2018)Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. ... -
Complex Refractive Indices of Cesium-Formamidinium-Based Mixed-Halide Perovskites with Optical Band Gaps from 1.5 to 1.8 eV
Werner, J.; Nogay, G.; Sahli, F.; Yang, T. C. J.; Brauninger, M.; Christmann, G.; et al. (2018)Cesium-formamidinium-based mixed-halide perovskite materials with optical band gaps ranging from 1.5 to 1.8 eV are investigated by variable-angle spectroscopic ellipsometry. The determined complex refractive indices are ... -
Exploring silicon carbide- and silicon oxide-based layer stacks for passivating contacts to silicon solar cells
Loper, P.; Nogay, G.; Wyss, P.; Hyvl, M.; Procel, P.; Stuckelberger, J.; et al. (2017)We present the development of passivating contacts for high-efficiency silicon solar cells using silicon oxide (SiOx) and silicon carbide (SiCx)-based layers. We discuss a comprehensive optimization of a SiCx-based passivating ... -
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
Nogay, G.; Stuckelberger, J.; Wyss, P.; Rucavado, E.; Allebe, C.; Koida, T.; et al. (2017)We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based ... -
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, C.; Debrot, F.; et al. (2016)We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses ... -
Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells
Ingenito, A.; Nogay, G.; Stuckelberger, J.; Wyss, P.; Gnocchi, L.; Allebé, C.; Horzel, J.; Despeisse, M.; Haug, F.-J.; Löper, P.; Ballif, C. (2019)We present an electron selective passivating contact based on a tunneling SiO. capped with a phosphorous doped silicon carbide and prepared with a high-temperature thermal anneal. We investigate in detail the effects of ... -
Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells
Mack, I.; Stuckelberger, J.; Wyss, P.; Nogay, G.; Jeangros, Q.; Horzel, J.; et al. (2018)We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiOx/Si layer stack at device level. The addition of the SiOx phase to the Si layer targets reduced optical ... -
Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells
Nogay, G.; Stuckelberger, J.; Wyss, P.; Jeangros, Q.; Allebe, C.; Niquille, X.; et al. (2016)The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative ...