Browsing by Author "Ruffieux, D."
Now showing items 1-4 of 4
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A 0.5 V 2.5 uW/MHz Microcontroller with Analog-Assisted Adaptive Body Bias PVT Compensation with 3.13nW/kB SRAM Retention in 55nm Deeply-Depleted Channel CMOS
Pons, M.; Müller, C. T.; Ruffieux, D.; Nagel, J.; Emery, S.; Burg, A.; Tanahashi, S.; Tanaka, Y.; Takeuchi, A. (2019)Microcontroller systems operating at low supply voltage in near or sub-threshold regime suffer both from increased effects of PVT (Process, Voltage, Temperature) variation and from a larger share of leakage on overall power ... -
Energy-Autonomous MCU Operating in sub-VT Regime with Tightly-Integrated Energy-Harvester : A SoC for IoT smart nodes containing a MCU with minimum-energy point of 2.9pJ/cycle and a harvester with output power range from sub-µW to 4.32mW
Deng, J.; Nagel, J.; Zahnd, L.; Pons, M.; Ruffieux, D.; Arm, C.; Persechini, P.; Emery, S. (2019)We describe a SoC achieving zero-net-energy operation by using energy harvesting and sub-threshold design. It consists of a microcontroller for data acquisition, data processing, and communication and an energy harvester ... -
Minimum Energy Point in Constant Frequency Designs under Adaptive Supply Voltage and Body Bias Adjustment in 55 nm DDC
Muller, C. T.; Pons, M.; Ruffieux, D.; Nagel, J. L.; Emery, S.; Burg, A.; et al. (2019)In this paper, we describe a systematic low-power design methodology for technologies that offer a strong body factor. Specifically, we explore both the body bias voltage and the supply voltage knobs in order to find the ... -
Three-Dimensional Nano-Acoustic Bragg Reflectors for CMOS Embedded NEMS
Yandrapalli, S.; Ruffieux, D.; Villanueva, L. G. (2017)Integration of CMOS electronic circuits and electromechanical resonators has been pursued for a long time by many different research groups and even foundries. This would improve the overall performance of electromechanical ...