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    Electrothermal Simulation of Large-Area Semiconductor Devices

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    Kirsch, C.; Altazin, S.; Hiestand, R.; Beierlein, T.; Ferrini, R.; Offermans, T.; et al.
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    Abstract
    The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006). The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results (Slawinski et al., 2011). We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method.
    Publication Reference
    International Journal of Multiphysics, vol. 11 (2), pp. 127-136, 2017.
    Year
    2017
    URI
    https://yoda.csem.ch/handle/20.500.12839/157
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