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    Demonstrating the high V-oc potential of PEDOT:PSS/c-Si heterojunctions on solar cells

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    Author
    Gogolin, R.; Zielke, D.; Descoeudres, A.; Despeisse, M.; Ballif, C.; Schmidt, J.
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    Abstract
    In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high V-oc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. (C) 2017 The Authors. Published by Elsevier Ltd.
    Publication Reference
    in 7th International Conference on Silicon Photovoltaics, Siliconpv 2017. vol. 124 (Issue), R. Preu, Ed., ed Amsterdam: Elsevier Science Bv, 2017, pp. 593-597.
    Year
    2017
    URI
    https://yoda.csem.ch/handle/20.500.12839/174
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