| dc.contributor.author | Gogolin, R. | |
| dc.contributor.author | Zielke, D. | |
| dc.contributor.author | Descoeudres, A. | |
| dc.contributor.author | Despeisse, M. | |
| dc.contributor.author | Ballif, C. | |
| dc.contributor.author | Schmidt, J. | |
| dc.date.accessioned | 2021-12-09T13:27:10Z | |
| dc.date.available | 2021-12-09T13:27:10Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | in 7th International Conference on Silicon Photovoltaics, Siliconpv 2017. vol. 124 (Issue), R. Preu, Ed., ed Amsterdam: Elsevier Science Bv, 2017, pp. 593-597. | |
| dc.identifier.uri | https://yoda.csem.ch/handle/20.500.12839/174 | |
| dc.description.abstract | In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high V-oc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. (C) 2017 The Authors. Published by Elsevier Ltd. | |
| dc.subject | PEDOT:PSS, heterojunctions, solar cells, V-oc potential, efficiency | |
| dc.title | Demonstrating the high V-oc potential of PEDOT:PSS/c-Si heterojunctions on solar cells | |
| dc.type | Proceedings Article | |
| dc.type.csemdivisions | Div-V | |
| dc.type.csemresearchareas | PV & Solar Buildings | |
| dc.identifier.doi | https://doi.org/10.1016/j.egypro.2017.09.295 | |
