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dc.contributor.authorGogolin, R.
dc.contributor.authorZielke, D.
dc.contributor.authorDescoeudres, A.
dc.contributor.authorDespeisse, M.
dc.contributor.authorBallif, C.
dc.contributor.authorSchmidt, J.
dc.date.accessioned2021-12-09T13:27:10Z
dc.date.available2021-12-09T13:27:10Z
dc.date.issued2017
dc.identifier.citationin 7th International Conference on Silicon Photovoltaics, Siliconpv 2017. vol. 124 (Issue), R. Preu, Ed., ed Amsterdam: Elsevier Science Bv, 2017, pp. 593-597.
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/174
dc.description.abstractIn this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high V-oc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. (C) 2017 The Authors. Published by Elsevier Ltd.
dc.subjectPEDOT:PSS, heterojunctions, solar cells, V-oc potential, efficiency
dc.titleDemonstrating the high V-oc potential of PEDOT:PSS/c-Si heterojunctions on solar cells
dc.typeProceedings Article
dc.type.csemdivisionsDiv-V
dc.type.csemresearchareasPV & Solar Buildings
dc.identifier.doihttps://doi.org/10.1016/j.egypro.2017.09.295


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