Show simple item record

dc.contributor.authorGogolin, R.
dc.contributor.authorZielke, D.
dc.contributor.authorDescoeudres, A.
dc.contributor.authorDespeisse, M.
dc.contributor.authorBallif, C.
dc.contributor.authorSchmidt, J.
dc.identifier.citationin 7th International Conference on Silicon Photovoltaics, Siliconpv 2017. vol. 124 (Issue), R. Preu, Ed., ed Amsterdam: Elsevier Science Bv, 2017, pp. 593-597.
dc.description.abstractIn this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high V-oc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. (C) 2017 The Authors. Published by Elsevier Ltd.
dc.subjectPEDOT:PSS, heterojunctions, solar cells, V-oc potential, efficiency
dc.titleDemonstrating the high V-oc potential of PEDOT:PSS/c-Si heterojunctions on solar cells
dc.typeProceedings Article
dc.type.csemresearchareasPV & Solar Buildings

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

  • Research Publications
    The “Research Publications” collection provides bibliographic information for scientific papers including conference proceedings and presentations.

Show simple item record