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dc.contributor.authorLoper, P.
dc.contributor.authorNogay, G.
dc.contributor.authorWyss, P.
dc.contributor.authorHyvl, M.
dc.contributor.authorProcel, P.
dc.contributor.authorStuckelberger, J.
dc.contributor.authoret al.
dc.identifier.citationin 2017 Ieee 44th Photovoltaic Specialist Conference (Issue), ed New York: Ieee, 2017, pp. 2073-2075.
dc.description.abstractWe present the development of passivating contacts for high-efficiency silicon solar cells using silicon oxide (SiOx) and silicon carbide (SiCx)-based layers. We discuss a comprehensive optimization of a SiCx-based passivating hole contact reaching implied open circuit voltages >715 mV. In addition, we introduce a passivating hole contact based on nanocrystalline SiOx (nc-SiOx) targeting compatibility with higher process temperatures as well as increased optical transparency for front side application. First planar test devices employing nc-SiOx-based passivating contacts for both charge carrier types are presented, yielding short-circuit current densities >34 mA/cm(2) and fill factors >78%, showing that efficient current extraction is possible despite the added SiOx phase and also indicating potential optical advantages of the concept.
dc.titleExploring silicon carbide- and silicon oxide-based layer stacks for passivating contacts to silicon solar cells
dc.typeProceedings Article
dc.type.csemresearchareasPV & Solar Buildings

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