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dc.contributor.authorEssig, S.
dc.contributor.authorAllebe, C.
dc.contributor.authorGeisz, J. F.
dc.contributor.authorSteiner, M. A.
dc.contributor.authorBarraud, L.
dc.contributor.authorDescoeudres, A.
dc.contributor.authoret al.
dc.date.accessioned2021-12-09T13:27:31Z
dc.date.available2021-12-09T13:27:31Z
dc.date.issued2017
dc.identifier.citationin 2017 Ieee 44th Photovoltaic Specialist Conference (Issue), ed New York: Ieee, 2017, pp. 3254-3255.
dc.identifier.isbn978-1-5090-5605-7
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/189
dc.description.abstractWe developed 4-terminal III-V/Si dual-junction solar cells that reach certified record 1-sun efficiencies over 32%. These efficiency values exceed the theoretical efficiency limit of single-junction solar cells and prove the high potential of Si-based multi-junction devices for next-generation solar panels.
dc.subjectsilicon solar cells, III-V semiconductor materials, multi-junction solar, cell, efficiency
dc.titleMechanically stacked 4-terminal III-V/Si tandem solar cells
dc.typeProceedings Article
dc.type.csemdivisionsDiv-V
dc.type.csemresearchareasPV & Solar Buildings


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