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dc.contributor.authorHaschke, J.
dc.contributor.authorMonnard, R.
dc.contributor.authorAntognini, L.
dc.contributor.authorCattin, J.
dc.contributor.authorAbdallah, A. A.
dc.contributor.authorAissa, B.
dc.contributor.authoret al.
dc.date.accessioned2021-12-09T14:01:33Z
dc.date.available2021-12-09T14:01:33Z
dc.date.issued2018
dc.identifier.citationin Siliconpv 2018: The 8th International Conference on Crystalline Silicon Photovoltaics. vol. 1999 (Issue), C. Ballif, R. Brendel, S. Glunz, G. Hahn, J. Poortmans, P. J. Ribeyron, et al., Eds., ed Melville: Amer Inst Physics, 2018.
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/266
dc.description.abstractToday, solar cells are generally optimized for 25 degrees C, whereas in most climates, especially hot and sunny ones, the operating device temperature is usually much higher, e.g. in the range of 60 degrees C. We investigate the use of n-doped nanocrystalline silicon oxide layers (nc-SiOx:H(n)) as front contact stacks in silicon heterojunction solar cells and compare them with oxide-free front contacts. Whereas a short-circuit current density of 41 mAcm(-2) could be obtained due to the increased transparency of the nc-SiOx:H(n) layers, the fill-factor is drastically reduced and leads to a reduced efficiency at 25 degrees C. Albeit the FF can be partly recovered at 60 degrees C, the highest efficiencies at 60 degrees C were so far obtained for the solar cells with oxide-free front contact stacks.
dc.titleNanocrystalline Silicon Oxide Stacks for Silicon Heterojunction Solar Cells for Hot Climates
dc.typeProceedings Article
dc.type.csemdivisionsDiv-V
dc.type.csemresearchareasPV & Solar Buildings
dc.identifier.doihttps://doi.org/10.1063/1.5049262


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