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dc.contributor.authorHusein, S.
dc.contributor.authorStuckelberger, M.
dc.contributor.authorWest, B.
dc.contributor.authorDing, L.
dc.contributor.authorMorales-Masis, M.
dc.contributor.authorDauzou, F.
dc.contributor.authoret al.
dc.date.accessioned2021-12-09T14:01:33Z
dc.date.available2021-12-09T14:01:33Z
dc.date.issued2018
dc.identifier.citationin 2018 Ieee 7th World Conference on Photovoltaic Energy Conversion (Issue), ed New York: Ieee, 2018, pp. 1810-1813.
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/271
dc.description.abstractUnderstanding the electron scattering mechanisms dominating transport in high and low mobility transparent conducting oxides can provide insight into improving the properties of this crucial photovoltaic device layer. Contributions from ionized impurity scattering, phonon scattering, and grain boundary scattering were measured and quantified in hydrogenated indium oxide thin films, which had varying composition and grain size, resulting in a wide range of carrier densities (similar to 10(18) cm(-3) - similar to 10(20) cm(-3)) and carrier mobilities (similar to 10 cm(2)/Vs - >100 cm(2)/Vs). We used temperature-dependent Hall measurements from 5-300 Kelvin to characterize electrical properties of the sputtered films. Grain boundary scattering dominated films with the lowest mobility, whereas films with >100 cm(2)/Vs mobilities were dominated by contributions from ionized impurity scattering and polar optical phonon scattering.
dc.subjectthin film, transparent conducting oxide, temperature-dependent Hall, carrier transport, solar-cell, transparent, scattering, films
dc.titleWhat Limits Mobility in Hydrogenated Indium Oxide?
dc.typeProceedings Article
dc.type.csemdivisionsDiv-V
dc.type.csemresearchareasOther
dc.identifier.doihttps://doi.org/10.1109/PVSC.2018.8547394


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