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dc.contributor.authorHoogerwerf, A. C.
dc.contributor.authorDurante, G. S.
dc.contributor.authorJames, R. J.
dc.contributor.authorDubois, M.
dc.contributor.authorDubochet, O.
dc.contributor.authorDespont, M.
dc.date.accessioned2021-12-09T14:07:02Z
dc.date.available2021-12-09T14:07:02Z
dc.date.issued2019
dc.identifier.citation2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII (TRANSDUCERS and EUROSENSORS XXXIII), pp. 2154-2157
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/383
dc.description.abstractThe paper describes the fabrication of a silicon carbide piezoresistive pressure sensors intended for operating temperatures of up to 600°C. The different fabrication aspects, such as the metallization scheme, the etching of a 300μm deep cavity, and the bonding to a silicon carbide back plate are discussed in detail.
dc.subjectSilicon Carbide;SiC;Pressure sensor;high temperature;harsh environment;DRIE;Deep Reactive Ion Etching;SiC contact;metallization
dc.titleSilicon Carbide Pressure Sensors for Harsh Environments
dc.typeProceedings Article
dc.type.csemdivisionsDiv-T
dc.type.csemresearchareasOther
dc.identifier.doihttps://doi.org/10.1109/TRANSDUCERS.2019.8808340


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