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dc.contributor.authorRazek, N.
dc.contributor.authorNeves, J.
dc.contributor.authorvon Kanel, H.
dc.contributor.authorLe Corre, P.
dc.contributor.authorRuedi, P. F.
dc.contributor.authorQuaglia, R.
dc.contributor.authoret al.
dc.date.accessioned2021-12-09T14:07:02Z
dc.date.available2021-12-09T14:07:02Z
dc.date.issued2019
dc.identifier.citation2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), p. 30
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/387
dc.description.abstractLow temperature wafer bonding of silicon to various materials is a key technology for all applications requiring a low temperature budget, such as monolithic CMOS integrated pixel detectors [1]. Here, we combine wet chemical etching of the native oxide from wafer surfaces with removal of the hydrogen passivation layer by a low-energy plasma prior to bonding in high vacuum (10 -8 mbar). The method is applicable to the bonding of a multitude of crystalline semiconductors, and for Si results in conductive interfaces similar to the ones of UHV-bonded defect-free surfaces [2].
dc.subjectSilicon, Detectors, Plasma temperature, Wafer bonding, Bonding, X-ray imaging,Passivation
dc.titleLow temperature covalent wafer bonding for X-ray imaging detectors
dc.typeJournal Article
dc.type.csemdivisionsDiv-T
dc.type.csemresearchareasPhotonics
dc.type.csemresearchareasMEMS & Packaging
dc.identifier.doihttps://doi.org/10.23919/LTB-3D.2019.8735288


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