Show simple item record

dc.contributor.authorRazek, N.
dc.contributor.authorNeves, J.
dc.contributor.authorvon Kanel, H.
dc.contributor.authorLe Corre, P.
dc.contributor.authorRuedi, P. F.
dc.contributor.authorQuaglia, R.
dc.contributor.authoret al.
dc.identifier.citation2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), p. 30
dc.description.abstractLow temperature wafer bonding of silicon to various materials is a key technology for all applications requiring a low temperature budget, such as monolithic CMOS integrated pixel detectors [1]. Here, we combine wet chemical etching of the native oxide from wafer surfaces with removal of the hydrogen passivation layer by a low-energy plasma prior to bonding in high vacuum (10 -8 mbar). The method is applicable to the bonding of a multitude of crystalline semiconductors, and for Si results in conductive interfaces similar to the ones of UHV-bonded defect-free surfaces [2].
dc.subjectSilicon, Detectors, Plasma temperature, Wafer bonding, Bonding, X-ray imaging,Passivation
dc.titleLow temperature covalent wafer bonding for X-ray imaging detectors
dc.typeJournal Article
dc.type.csemresearchareasMEMS & Packaging

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

  • Research Publications
    The “Research Publications” collection provides bibliographic information for scientific papers including conference proceedings and presentations.

Show simple item record