| dc.contributor.author | Razek, N. | |
| dc.contributor.author | Neves, J. | |
| dc.contributor.author | von Kanel, H. | |
| dc.contributor.author | Le Corre, P. | |
| dc.contributor.author | Ruedi, P. F. | |
| dc.contributor.author | Quaglia, R. | |
| dc.contributor.author | et al. | |
| dc.date.accessioned | 2021-12-09T14:07:02Z | |
| dc.date.available | 2021-12-09T14:07:02Z | |
| dc.date.issued | 2019 | |
| dc.identifier.citation | 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), p. 30 | |
| dc.identifier.uri | https://yoda.csem.ch/handle/20.500.12839/387 | |
| dc.description.abstract | Low temperature wafer bonding of silicon to various materials is a key technology for all applications requiring a low temperature budget, such as monolithic CMOS integrated pixel detectors [1]. Here, we combine wet chemical etching of the native oxide from wafer surfaces with removal of the hydrogen passivation layer by a low-energy plasma prior to bonding in high vacuum (10 -8 mbar). The method is applicable to the bonding of a multitude of crystalline semiconductors, and for Si results in conductive interfaces similar to the ones of UHV-bonded defect-free surfaces [2]. | |
| dc.subject | Silicon, Detectors, Plasma temperature, Wafer bonding, Bonding, X-ray imaging,Passivation | |
| dc.title | Low temperature covalent wafer bonding for X-ray imaging detectors | |
| dc.type | Journal Article | |
| dc.type.csemdivisions | Div-T | |
| dc.type.csemresearchareas | Photonics | |
| dc.type.csemresearchareas | MEMS & Packaging | |
| dc.identifier.doi | https://doi.org/10.23919/LTB-3D.2019.8735288 | |
