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dc.contributor.authorKivambe, M. M.
dc.contributor.authorHaschke, J.
dc.contributor.authorHorzel, J.
dc.contributor.authorAissa, B.
dc.contributor.authorAbdallah, A. A.
dc.contributor.authorBelaidi, A.
dc.contributor.authoret al.
dc.identifier.citationAcs Applied Energy Materials, vol. 2 (7), pp. 4900-4906, Jul 2019.
dc.description.abstractWe report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 mu m) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.
dc.subjectmonolike Si, cast-mono Si, quasi-mono Si, silicon heterojunction solar, cell, high efficiency, phosphorus diffusion gettering, crystalline silicon, directional solidification, recombination activity, quality, growth, si, Materials Science
dc.titleRecord-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process
dc.typeJournal Article
dc.type.csemresearchareasPV & Solar Buildings

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