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    A 1kb single-side read 6T sub-threshold SRAM in 180 nm with 530 Hz frequency 3.1 nA total current and 2.4 nA leakage at 0.27 V

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    Author
    Pons, M.; Thanh-Chau Le, C.; Arm, C.; Severac, D.
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    Abstract
    A 1kb 180 nm single-side read 6T sub-threshold SRAM has been designed focusing on manufacturability, integrated and measured satisfactorily. Silicon measurements show 3.1 nA total current, 2.4 nA leakage, at 530 Hz for a minimum operating voltage of 0.27 V with no bit errors. The area of the block is 22'350 µm2.
    Publication Reference
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
    Year
    2015
    URI
    https://yoda.csem.ch/handle/20.500.12839/49
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