Browsing CSEM Archive by Author "Zeng, Xi"
Now showing items 1-20 of 27
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1.1 ps pulse-on-demand generation in tandem-cavity InGaN laser
Boiko, Dmitri L.; Zeng, Xi; Weig, Thomas; Schwarz, Ulrich T.; Sulmoni, Luca; Lamy, Jean-Michel; Grandjean, Nicolas (2012) -
1/f noise in external-cavity InGaN diode laser at 420  nm wavelength for atomic spectroscopy
Zeng, Xi; Boiko, Dmitri L. (2014-03-15)We have extensively studied the frequency noise and relative intensity noise spectra in a tunable external-cavity InGaN diode laser at blue (420 nm) wavelengths. We report flicker (1/f) frequency-noise behavior at low ... -
Absorption spectroscopy of 85Rb atoms at 420 nm: Pressure broadening with N2 buffer gas and saturation intensity
Zeng, Xi; Boiko, Dmitri L. (2014-06)We experimentally measure the pressure broadening coefficient of absorption linewidth in the 85Rb 52S1/2-62P3/2 transition (420 nm wavelength) due to collisions with N2 buffer gas. In addition, we measure the saturation ... -
Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode
Sulmoni, Luca; Lamy, Jean-Michel; Carlin, Jean-François; Zeng, Xi; Boiko, Dmitri L.; Grandjean, Nicolas (2012-10)InGaN-based laser diodes (LDs) are suitable for obtaining low-cost and compact short-pulse laser light sources in the blue-violet range exploiting either mode-locking or self-pulsating regimes. Typically these devices ... -
External Cavity Diode Laser at 420 nm Wavelength for Atomic Spectroscopy
Zeng, Xi; Boiko, Dmitri L. (2013) -
III-N based violet emitting short - pulse laser diodes
Grandjean, Nicolas; Sulmoni, Luca; Lamy, Jean-Michel; Dorsaz, Julien; Castiglia, Antonino; Carlin, Jean-François; Zeng, Xi; Boiko, Dmitri L.; Scheibenzuber, Wolfgang G.; Schwarz, Ulrich T. (2012) -
In-depth analysis of injection-seeded long external cavity InGaN/GaN surface-emitting laser
Zeng, Xi; Boiko, Dmitri L.; Cosendey, Gatien; Glauser, Marlene; Carlin, Jean-François; Grandjean, Nicolas (2013-01-28) -
Injection-seeded long external cavity InGaN/GaN surface-emitting laser at 420 nm wavelength
Zeng, Xi; Boiko, Dmitri L.; Cosendey, Gatien; Glauser, Marlene; Carlin, Jean-François; Grandjean, Nicolas (2013) -
Measuring Excited State Lifetime of Alkali Atoms with Novel Pump-Probe Technique
Zeng, Xi; Boiko, Dmitri L. (2015) -
Mode Clustering and Frequency Noise in External Cavity GaN Diode Laser at 420 nm Wavelength for Atomic Spectroscopy
Zeng, Xi; Boiko, Dmitri L. (2013) -
Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers
Vasil'ev, Peter P.; Sergeev, A. B.; Smetanin, Igor V.; Weig, Thomas; Schwarz, Ulrich T.; Sulmoni, Luca; Dorsaz, Julien; Lamy, Jean-Michel; Carlin, Jean-François; Grandjean, Nicolas; Zeng, Xi; Stadelmann, Thomas; Grossmann, Sylvain; Hoogerwerf, Arno C.; Boiko, Dmitri L. (2013-03-25)Passive mode-locked pulses with repetition frequencies in the range 40 to 90?GHz were observed in blue-violet GaN-based quantum-well lasers without external cavities. The lasers had two-section geometry with built-in ... -
Mode-locked microwave atomic clock laser: A concept
Zeng, Xi; Boiko, Dmitri L. (2015-10-12) -
Optical beam size effects in spin polarized pumping
Zeng, Xi; Wang, Christine Y.; Boiko, Dmitri L. (2014-06)We have experimentally and theoretically investigate the effect of optical pump beam size on narrowband spin polarized optical pumping of alkali atom vapor. We developed a six-level model describing narrowband spin polarized ... -
Optical characteristics of multi-section GaN-based laser diodes
Sulmoni, Luca; Lamy, Jean-Michel; Dorsaz, Julien; Carlin, Jean-François; Boiko, Dmitri L.; Zeng, Xi; Grandjean, Nicolas (2012-05-05) -
Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity
Zeng, Xi; Boiko, Dmitri L.; Cosendey, Gatien; Glauser, Marlene; Carlin, Jean-François; Grandjean, Nicolas (2012) -
Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity
Zeng, Xi; Boiko, Dmitri L.; Cosendey, Gatien; Glauser, Marlene; Carlin, Jean-François; Grandjean, Nicolas (2012-10-01)Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420?nm has been realized. Lasing at external cavity lengths of up to 50?mm is demonstrated, making integration of practical ... -
Self-pulsating regime from multi-section InGaN-based laser diode
Lamy, Jean-Michel; Sulmoni, Luca; Carlin, Jean-François; Zeng, Xi; Boiko, Dmitri L.; Weig, Thomas; Schwarz, Ulrich T.; Grandjean, Nicolas (2012) -
Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold
Zeng, Xi; Sulmoni, Luca; Lamy, Jean-Michel; Stadelmann, Thomas; Grossmann, Sylvain; Hoogerwerf, Arno C.; Grandjean, Nicolas; Boiko, Dmitri L. (2015-02-16)In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation ... -
Solitary Pulse-on-Demand Production by Optical Injection Locking of Passively Q-Switched InGaN Diode Lasers Near Lasing Threshold
Zeng, Xi; Sulmoni, Luca; Lamy, Jean-Michel; Stadelmann, Thomas; Grossmann, Sylvain; Hoogerwerf, Arno C.; Grandjean, Nicolas; Boiko, Dmitri L. (2014-09)We report on optical injection locking of Q-switched InGaN multi-section diode laser from CW tunable laser to produce solitary pulses at precise wavelength. To the best of our knowledge, this has never been done before. -
Solitary Pulse-on-Demand Production by Optical Injection Locking of Passively Q-Switched InGaN Diode Lasers Near Lasing Threshold
Zeng, Xi; Sulmoni, Luca; Lamy, Jean-Michel; Stadelmann, Thomas; Grossmann, Sylvain; Hoogerwerf, Arno C.; Grandjean, Nicolas; Boiko, Dmitri L. (2014-08-24)