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dc.contributor.authorTorcheboeuf, Nicolas
dc.contributor.authorDroz, Serge
dc.contributor.authorSimonyte, Ieva
dc.contributor.authorMiasojedovas, Arunas
dc.contributor.authorTrinkunas, Augustinas
dc.contributor.authorVizbaras, Kristijonas
dc.contributor.authorVizbaras, Augustinas
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:07:48Z
dc.date.available2022-02-14T17:07:48Z
dc.date.issued2018
dc.identifier.citation2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe (USA), pp. 1-2
dc.identifier.isbn978-1-5386-6486-5
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/684
dc.description.abstractWe demonstrate a rapidly (3 ms) and widely (222 nm) tunable, compact external cavity GaSb-based diode laser with a MEMS mirror. It delivers from 8 to 24 mW power over the tuning range, showing the side-mode suppression ratio of >50dB and controllable mode-hops of ~18GHz.
dc.titleMEMS Tunable Littman-Metcalf Diode Laser at 2.2?m for Rapid Broadband Spectroscopy in Aqueous Solutions
dc.typeProceedings Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8516228/
dc.identifier.doi10.1109/ISLC.2018.8516228


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