Abstract
Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA)(VSA)<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mrow><mrow><mo>(</mo><mrow><msub><mi>V</mi><mrow><mtext>SA</mtext></mrow></msub></mrow><mo>)</mo></mrow></mrow></math> has been studied. An analytical approach is developed to estimate the carrier lifetime ?a?a<math display="inline" overflow="scroll" altimg="eq-00002.gif"><mrow><msub><mi>?</mi><mi>a</mi></msub></mrow></math> in the SA section from the measurements of the hysteresis width, which leads to ?a=1.9?ns?a=1.9?ns<math display="inline" overflow="scroll" altimg="eq-00003.gif"><mrow><msub><mi>?</mi><mi>a</mi></msub><mo>=</mo><mn>1.9</mn><mtext>?</mtext><mtext>ns</mtext></mrow></math> at zero bias. ?a?a<math display="inline" overflow="scroll" altimg="eq-00004.gif"><mrow><msub><mi>?</mi><mi>a</mi></msub></mrow></math> is found to decrease rapidly for higher reverse biases and a minimum of ?a=0.4?ns?a=0.4?ns<math display="inline" overflow="scroll" altimg="eq-00005.gif"><mrow><msub><mi>?</mi><mi>a</mi></msub><mo>=</mo><mn>0.4</mn><mtext>?</mtext><mtext>ns</mtext></mrow></math> is interpolated for flatband conditions. We explain the dependence of the carrier lifetime on VSAVSA<math display="inline" overflow="scroll" altimg="eq-00006.gif"><mrow><msub><mi>V</mi><mrow><mtext>SA</mtext></mrow></msub></mrow></math> via the modification of the quantum-confined Stark effect.
Publication Reference
Applied Physics Letters, vol. 98 (19), pp. 191115
Year
2011-05-09
