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dc.contributor.authorSmetanin, Igor V.
dc.contributor.authorVasil’ev, Peter P.
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:07:54Z
dc.date.available2022-02-14T17:07:54Z
dc.date.issued2011-08-29
dc.identifier.citationOptics Express, vol. 19 (18), pp. 17114-17120
dc.identifier.issn1094-4087
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/767
dc.description.abstractAnalytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach.
dc.titleTheory of the ultrafast mode-locked GaN lasers in a large-signal regime
dc.typeJournal Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
dc.identifier.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-19-18-17114
dc.identifier.doi10.1364/OE.19.017114


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