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dc.contributor.authorBoiko, Dmitri L.
dc.contributor.authorVasil’ev, Peter P.
dc.date.accessioned2022-02-14T17:07:55Z
dc.date.available2022-02-14T17:07:55Z
dc.date.issued2012-04-23
dc.identifier.citationOptics Express, vol. 20 (9), pp. 9501-9515
dc.identifier.issn1094-4087
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/778
dc.description.abstractWe analyze theoretically the superradiant emission (SR) in semiconductor edge-emitting laser heterostructures using InGaN/GaN heterostructure quantum well (QW) as a model system. The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. Numerical simulations based on semiclassical traveling wave Maxwell-Bloch equations predict building up of macroscopic coherences in the ensemble of electrons and holes during SR pulse formation. We show that SR is covered by the Ginzburg-Landau equation for a phase transition to macroscopically coherent state of matter. The presented theory is applicable to other semiconductor materials.
dc.titleSuperradiance dynamics in semiconductor laser diode structures
dc.typeJournal Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
dc.identifier.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-20-9-9501
dc.identifier.doi10.1364/OE.20.009501


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