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dc.contributor.authorBoiko, Dmitri L.
dc.contributor.authorVasil’ev, Peter P.
dc.identifier.citationOptics Express, vol. 20 (9), pp. 9501-9515
dc.description.abstractWe analyze theoretically the superradiant emission (SR) in semiconductor edge-emitting laser heterostructures using InGaN/GaN heterostructure quantum well (QW) as a model system. The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. Numerical simulations based on semiclassical traveling wave Maxwell-Bloch equations predict building up of macroscopic coherences in the ensemble of electrons and holes during SR pulse formation. We show that SR is covered by the Ginzburg-Landau equation for a phase transition to macroscopically coherent state of matter. The presented theory is applicable to other semiconductor materials.
dc.titleSuperradiance dynamics in semiconductor laser diode structures
dc.typeJournal Article

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