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    Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode

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    Author
    Sulmoni, Luca; Lamy, Jean-Michel; Carlin, Jean-François; Zeng, Xi; Boiko, Dmitri L.; Grandjean, Nicolas
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    Abstract
    InGaN-based laser diodes (LDs) are suitable for obtaining low-cost and compact short-pulse laser light sources in the blue-violet range exploiting either mode-locking or self-pulsating regimes. Typically these devices consist of a Fabry-Perot-type cavity with separate electrical p-contacts to define multiple sections: a short reverse-biased section that acts as a saturable absorber (SA) and a long forward-biased gain section. Recently we demonstrated 18 ps duration optical pulses under the self-pulsation regime on InGaN multi-section blue LDs at repetition rate of several GHz [1]. The development of this new kind of ultrafast sources would be of great interest for applications such as next generation large-capacity optical storage, ultraprecise nano-processing and biomedical imaging [2].
    Publication Reference
    ISLC 2012 International Semiconductor Laser Conference, San Diego, CA (USA), pp. 114-115
    Year
    2012-10
    URI
    https://yoda.csem.ch/handle/20.500.12839/784
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