Abstract
Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420?nm has been realized. Lasing at external cavity lengths of up to 50?mm is demonstrated, making integration of practical sized intracavity elements possible. Spectral and beam profile measurements indicate best operation conditions in a semiconfocal cavity configuration. Lasing threshold of 20.9?W is achieved for a 49?mm long cavity with output beam quality parameter M2 not exceeding 1.1.
Publication Reference
Applied Physics Letters, vol. 101 (14), pp. 141120
Year
2012-10-01
