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dc.contributor.authorWeig, Thomas
dc.contributor.authorSchwarz, Ulrich T.
dc.contributor.authorSulmoni, Luca
dc.contributor.authorLamy, Jean-Michel
dc.contributor.authorCarlin, Jean-François
dc.contributor.authorGrandjean, Nicolas
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:07:56Z
dc.date.available2022-02-14T17:07:56Z
dc.date.issued2013-03-04
dc.identifier.citationNovel In-Plane Semiconductor Lasers XII, San Francisco, California (United States), pp. 86400H
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/790
dc.description.abstractWe demonstrate picosecond pulse generation in the blue-violet wavelength region by passive intra-cavity mode-locking in GaN-based ridge waveguide laser diodes with monolithically integrated absorbers. For cavity lengths of 1.2 and 0.6 mm we observe repetition frequencies of 40 and 90 GHz, and pulse lengths of 7 and 4 ps, respectively. The results are explained by an extremely short, tunneling dominated carrier life time in the saturable absorber at high negative bias. The fast depletion of the charge carriers in the absorber is investigated by bias-dependent life-time measurements in the absorber.
dc.titlePassive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
dc.typeProceedings Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
dc.identifier.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/8640/86400H/Passive-mode-locking-in-the-cavity-of-monolithic-GaN-based/10.1117/12.2004483.short
dc.identifier.doi10.1117/12.2004483


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