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dc.contributor.authorZeng, Xi
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:07:58Z
dc.date.available2022-02-14T17:07:58Z
dc.date.issued2014-03-15
dc.identifier.citationOptics Letters, vol. 39 (6), pp. 1685-1688
dc.identifier.issn1539-4794
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/807
dc.description.abstractWe have extensively studied the frequency noise and relative intensity noise spectra in a tunable external-cavity InGaN diode laser at blue (420 nm) wavelengths. We report flicker (1/f) frequency-noise behavior at low Fourier frequencies measured using offset frequency-absorption spectroscopy on Rb85 vapor cells, which yields an estimated lasing linewidth of 870 kHz. From considerations of high-dislocation density in III nitride epitaxy, 1/f noise and linewidth were expected to be larger than in conventional III-V lasers. Surprisingly, the measured noise characteristics are comparable to or better than those of near-infrared distributed feedback lasers and external-cavity diode lasers. The noise-reduction mechanism is attributed to the wavelength dependence of 1/f noise. We discuss challenges in atomic spectroscopy applications caused by defects and mode-clustering effect in GaN lasers. Using the Hakki–Paoli analysis in an aged laser diode, we provide possible explanation about the origin of observed mode clustering.
dc.title1/f noise in external-cavity InGaN diode laser at 420  nm wavelength for atomic spectroscopy
dc.typeJournal Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
dc.identifier.urlhttps://www.osapublishing.org/ol/abstract.cfm?uri=ol-39-6-1685
dc.identifier.doi10.1364/OL.39.001685


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