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dc.contributor.authorBoiko, Dmitri L.
dc.contributor.authorZeng, Xi
dc.contributor.authorStadelmann, Thomas
dc.contributor.authorGrossmann, Sylvain
dc.contributor.authorHoogerwerf, Arno C.
dc.date.accessioned2022-02-14T17:07:58Z
dc.date.available2022-02-14T17:07:58Z
dc.date.issued2014-09
dc.identifier.citation2014 International Semiconductor Laser Conference, Palma de Mallorca (Spain), pp. 221-222
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/813
dc.description.abstractWe analyze transition from amplified spontaneous emission to Q-switched lasing in InGaN laser with absorber. We find narrow region that requires us to evoke cooperative recombination of two electron-hole pairs in X or II configuration.
dc.titleSuperradiance in electrically pumped semiconductor laser: Myth or reality?
dc.typeProceedings Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
dc.identifier.doi10.1109/ISLC.2014.243


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