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dc.contributor.authorBoiko, Dmitri L.
dc.contributor.authorZeng, Xi
dc.contributor.authorStadelmann, Thomas
dc.contributor.authorGrossmann, Sylvain
dc.contributor.authorHoogerwerf, Arno C.
dc.identifier.citation2014 International Semiconductor Laser Conference, Palma de Mallorca (Spain), pp. 221-222
dc.description.abstractWe analyze transition from amplified spontaneous emission to Q-switched lasing in InGaN laser with absorber. We find narrow region that requires us to evoke cooperative recombination of two electron-hole pairs in X or II configuration.
dc.titleSuperradiance in electrically pumped semiconductor laser: Myth or reality?
dc.typeProceedings Article

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