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dc.contributor.authorKrakowski, Michel
dc.contributor.authorResneau, Patrick
dc.contributor.authorGarcia, Michel
dc.contributor.authorVinet, Eric
dc.contributor.authorRobert, Yannick
dc.contributor.authorLecomte, Michel
dc.contributor.authorParillaud, Olivier
dc.contributor.authorGerard, Bruno
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:08:04Z
dc.date.available2022-02-14T17:08:04Z
dc.date.issued2017-02-20
dc.identifier.citationNovel In-Plane Semiconductor Lasers XVI, San Francisco, CA (USA), pp. 101230E
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/868
dc.description.abstractMode-locked semiconductor laser technology is a promising technology candidate considered by European Space Agency (ESA) for optical metrology systems and other space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement. For these applications, we have designed, realized and characterized a multi-section monolithic-cavity tapered laser diode with a record cavity length of 13.5mm. The laser operates at 975nm wavelength with average output power up to 600mW. It is based on a MOVPE grown laser structure with Aluminium free active region enabling high optical gain, low internal losses and low series resistance. It reaches passive mode-locking operation on fundamental cavity round trip frequency of 2.88GHz with chirped pulse width of 6.2ps and time bandwidth product of 8 for the average output power of 250mW. Alongside with passive mode-locking operation, we discuss other lasing regimes in these very long tapered lasers.
dc.titleLasing dynamics of very long (13.5mm) tapered laser emitting at 975 nm
dc.typeProceedings Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
dc.identifier.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/10123/101230E/Lasing-dynamics-of-very-long-135mm-tapered-laser-emitting-at/10.1117/12.2252690.short
dc.identifier.doi10.1117/12.2252690


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