Show simple item record

dc.contributor.authorKrakowski, Michel
dc.contributor.authorResneau, Patrick
dc.contributor.authorGarcia, Michel
dc.contributor.authorVinet, Eric
dc.contributor.authorRobert, Yannick
dc.contributor.authorLecomte, Michel
dc.contributor.authorParillaud, Olivier
dc.contributor.authorGerard, Bruno
dc.contributor.authorBoiko, Dmitri L.
dc.identifier.citationNovel In-Plane Semiconductor Lasers XVI, San Francisco, CA (USA), pp. 101230E
dc.description.abstractMode-locked semiconductor laser technology is a promising technology candidate considered by European Space Agency (ESA) for optical metrology systems and other space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement. For these applications, we have designed, realized and characterized a multi-section monolithic-cavity tapered laser diode with a record cavity length of 13.5mm. The laser operates at 975nm wavelength with average output power up to 600mW. It is based on a MOVPE grown laser structure with Aluminium free active region enabling high optical gain, low internal losses and low series resistance. It reaches passive mode-locking operation on fundamental cavity round trip frequency of 2.88GHz with chirped pulse width of 6.2ps and time bandwidth product of 8 for the average output power of 250mW. Alongside with passive mode-locking operation, we discuss other lasing regimes in these very long tapered lasers.
dc.titleLasing dynamics of very long (13.5mm) tapered laser emitting at 975 nm
dc.typeProceedings Article

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

  • Research Publications
    The “Research Publications” collection provides bibliographic information for scientific papers including conference proceedings and presentations.

Show simple item record