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dc.contributor.authorKobayashi, E.
dc.contributor.authorDe Wolf, S.
dc.contributor.authorLevrat, J.
dc.contributor.authorChristmann, G.
dc.contributor.authorDescoeudres, A.
dc.contributor.authorNicolay, S.
dc.contributor.authoret al.
dc.date.accessioned2021-12-09T13:14:56Z
dc.date.available2021-12-09T13:14:56Z
dc.date.issued2016
dc.identifier.citationApplied Physics Letters, vol. 109 (15), p. 5, Oct 2016.
dc.identifier.urihttps://yoda.csem.ch/handle/20.500.12839/96
dc.description.abstractSilicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si: H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si: H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented. Published by AIP Publishing.
dc.subjecthydrogenated amorphous-silicon, efficiency, defects, charge, wafers, Physics
dc.titleLight-induced performance increase of silicon heterojunction solar cells
dc.typeJournal Article
dc.type.csemdivisionsDiv-V
dc.type.csemresearchareasPV & Solar Buildings
dc.identifier.doihttps://doi.org/10.1063/1.4964835


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