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dc.contributor.authorKobayashi, E.
dc.contributor.authorDe Wolf, S.
dc.contributor.authorLevrat, J.
dc.contributor.authorChristmann, G.
dc.contributor.authorDescoeudres, A.
dc.contributor.authorNicolay, S.
dc.contributor.authoret al.
dc.identifier.citationApplied Physics Letters, vol. 109 (15), p. 5, Oct 2016.
dc.description.abstractSilicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si: H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si: H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented. Published by AIP Publishing.
dc.subjecthydrogenated amorphous-silicon, efficiency, defects, charge, wafers, Physics
dc.titleLight-induced performance increase of silicon heterojunction solar cells
dc.typeJournal Article
dc.type.csemresearchareasPV & Solar Buildings

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