Sputtering for the Formation of Si-Based Passivating Contacts
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Author
Allebe, Christophe
Descoeudres, Antoine
Wyss, Patrick
Boillat, Pauline
Pernes, Nicolas
Paviet-Salomon, Bertrand
Ballif, Christophe
DOI
10.1109/JPHOTOV.2023.3324998
Abstract
We investigate the electrical properties of electron-selective passivating contacts based on thin tunnel oxide capped by a phosphorus-doped poly-Si layer. The poly-Si formation relies on the sputtering of the amorphous-Si layer subsequently annealed. We study the impact of the doping method, the phosphorus content of the Si target, sputtering parameters as well as annealing temperature on surface passivation and carrier extraction. The possibility to deposit in the same sputtering tool both the tunnel oxide and the poly-Si layer is also investigated. It is found that similar levels of implied VOC and contact resistivity are attained when the tunnel oxide is grown chemically or deposited by sputtering. In-situ doping of the silicon layer with doped Si targets leads to the same level of passivation and carrier extraction than when the doping is performed in a second step, ex-situ, by POCl3 or plasma-assisted process, with values of implied VOC above 730 mV and contact resistivity down to 2
Publication Reference
IEEE Journal of Photovoltaics, 14 (1), pp. 35 - 40
Year
2024