Theory of the ultrafast mode-locked GaN lasers in a large-signal regime
Abstract
Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach.
Publication Reference
Optics Express, vol. 19 (18), pp. 17114-17120
Year
2011-08-29