Optical Bistability in Multi-section InGaN-based Laser Diodes

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dc.contributor.authorDorsaz, Julien
dc.contributor.authorBoiko, Dmitri L.
dc.contributor.authorSulmoni, Luca
dc.contributor.authorCarlin, Jean-François
dc.contributor.authorGrandjean, Nicolas
dc.date.accessioned2022-02-14T17:07:42Z
dc.date.available2022-02-14T17:07:42Z
dc.date.issued2011
dc.identifier.citation9th International Conference on Nitride Semiconductors - ICNS 2011, Glasgow, Scotland (UK), pp. PG2.01
dc.identifier.urihttps://hdl.handle.net/20.500.12839/558
dc.titleOptical Bistability in Multi-section InGaN-based Laser Diodes
dc.typeProceedings Article
dc.type.csemdivisionsBU-I
dc.type.csemresearchareasPhotonics
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