Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells

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dc.contributor.authorMack, I.
dc.contributor.authorStuckelberger, J.
dc.contributor.authorWyss, P.
dc.contributor.authorNogay, G.
dc.contributor.authorJeangros, Q.
dc.contributor.authorHorzel, J.
dc.contributor.authoret al.
dc.date.accessioned2021-12-09T14:00:44Z
dc.date.available2021-12-09T14:00:44Z
dc.date.issued2018
dc.description.abstractWe investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiOx/Si layer stack at device level. The addition of the SiOx phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiOx/Sibased passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V-oc of 691 mV, a Jsc of 33.9 mA/cm(2), a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. Temperature-dependent IV-measurements at solar cell level were performed in order to understand the physical mechanisms behind charge carrier transport and surface passivation of the mixed-phase SiOx/Si layer stack. The results were compared to those of a standard silicon heterojunction (SHJ) cell on a similar planar substrate. The temperature dependence of the IV-curves in the range from-100 degrees C to and75 degrees C reveals that the hybrid cell is less temperature sensitive with respect to the SHJ cell. Furthermore, at low temperatures, the analysis reveals a reduction of the voc temperature coefficient of the hybrid cell, whereas for the SHJ cell a saturation occurs. This behaviour hints that the barrier imposed by the SiOx/Si-based contact is less pronounced than the barrier imposed by a standard SHJ contact.
dc.identifier.citationSolar Energy Materials and Solar Cells, vol. 181, pp. 9-14, Jul 2018.
dc.identifier.doihttps://doi.org/10.1016/j.solmat.2017.12.030
dc.identifier.urihttps://hdl.handle.net/20.500.12839/254
dc.subjectPassivating contact, Silicon solar cells, Silicon oxide, Series, resistivity, Temperature dependence, temperature-dependence, resistance, layers, si, photovoltaics, performance, efficiency, voltage, Energy and Fuels, Materials Science, Physics
dc.titleProperties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells
dc.typeJournal Article
dc.type.csemdivisionsBU-V
dc.type.csemresearchareasSolar Cells and Modules
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