Co-annealing of PECVD boron emitters and poly-Si passivating contacts for leaner TOPCon solar cell fabrication
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Author
Genç, Ezgi
Hurni, Julien
Libraro, Sofia
Allebé, Christophe
Paviet-Salomon, Bertrand
Ballif, Christophe
Morisset, Audrey
Haug, Franz Josef
DOI
10.1016/j.solmat.2025.113713
Abstract
This study investigates the feasibility of a single-step annealing process for tunnel oxide passivating contact (TOPCon) solar cell fabrication to replace the conventional two-step approach. We present a novel method using a single thermal treatment to simultaneously form the boron emitter at the front and poly-Si-based passivating contact at the rear of the device. Both are based on layers deposited by plasma-enhanced chemical vapor deposition (PECVD). First, we tailor the boron emitter profile. We achieved boron emitter profiles with surface concentrations ranging from 3×1019to1×1020cm−3 and depths between 100 and 600 nm by adjusting the deposition parameters and annealing conditions. Secondly, we show that n-type poly-Si layers are suitable for co-annealing when an additional N<inf>2</inf>O plasma treatment is applied to tunnel oxide formed by exposure to UV-O<inf>3</inf>. This approach enables the achievement of iV<inf>oc</inf> up to 720 mV and contact resistivity ≤100
Publication Reference
Solar Energy Materials and Solar Cells, 292, art. no. 113713
Year
2025