nc-SiC by PECVD for High-Temperature Passivating Contacts
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Author
Genç, Ezgi
Hurni, Julien
Müller, Arnold Milenko
Vockenhuber, Christof
Koida, Takashi
Morisset, Audrey
Ballif, Christophe
Haug, Franz Josef
DOI
10.1109/JPHOTOV.2025.3577294
Abstract
This work investigates the potential of nanocrystalline silicon carbide (nc-SiC) films as transparent passivating contacts for high-efficiency solar cells. A plasma-enhanced chemical vapor deposition process for high hydrogen radical density was developed to fabricate nc-SiC films. The influence of phosphorus (P) doping and thermal treatment on the structural, compositional, and electrical properties of these films was investigated. Increased doping reduced the contact resistance but also negatively affected the open circuit voltage (iV<inf>oc</inf>). We identified a set of parameters that provided a compromise between conductivity and passivation, resulting in a maximum iV<inf>oc</inf> of 708 mV on textured surfaces with a contact resistance of around 100
Publication Reference
IEEE Journal of Photovoltaics, 15 (5), pp. 630 - 638
Year
2025