Exploring silicon carbide- and silicon oxide-based layer stacks for passivating contacts to silicon solar cells
No Thumbnail Available
Author
Loper, P.
Nogay, G.
Wyss, P.
Hyvl, M.
Procel, P.
Stuckelberger, J.
et al.
Abstract
We present the development of passivating contacts for high-efficiency silicon solar cells using silicon oxide (SiOx) and silicon carbide (SiCx)-based layers. We discuss a comprehensive optimization of a SiCx-based passivating hole contact reaching implied open circuit voltages >715 mV. In addition, we introduce a passivating hole contact based on nanocrystalline SiOx (nc-SiOx) targeting compatibility with higher process temperatures as well as increased optical transparency for front side application. First planar test devices employing nc-SiOx-based passivating contacts for both charge carrier types are presented, yielding short-circuit current densities >34 mA/cm(2) and fill factors >78%, showing that efficient current extraction is possible despite the added SiOx phase and also indicating potential optical advantages of the concept.
Publication Reference
in 2017 Ieee 44th Photovoltaic Specialist Conference (Issue), ed New York: Ieee, 2017, pp. 2073-2075.
Year
2017