Self-pulsating regime from multi-section InGaN-based laser diode

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dc.contributor.authorLamy, Jean-Michel
dc.contributor.authorSulmoni, Luca
dc.contributor.authorCarlin, Jean-François
dc.contributor.authorZeng, Xi
dc.contributor.authorBoiko, Dmitri L.
dc.contributor.authorWeig, Thomas
dc.contributor.authorSchwarz, Ulrich T.
dc.contributor.authorGrandjean, Nicolas
dc.date.accessioned2022-02-14T17:07:42Z
dc.date.available2022-02-14T17:07:42Z
dc.date.issued2012
dc.identifier.citationEuropean Semiconductor Laser Workshop - ESLW 2012, Brussels (BE)
dc.identifier.urihttps://hdl.handle.net/20.500.12839/577
dc.titleSelf-pulsating regime from multi-section InGaN-based laser diode
dc.typeConference / Workshop
dc.type.csemdivisionsBU-I
dc.type.csemresearchareasPhotonics
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