Silicon Carbide Pressure Sensors for Harsh Environments
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Author
Hoogerwerf, A. C.
Durante, G. S.
James, R. J.
Dubois, M.
Dubochet, O.
Despont, M.
DOI
https://doi.org/10.1109/TRANSDUCERS.2019.8808340
Abstract
The paper describes the fabrication of a silicon carbide piezoresistive pressure sensors intended for operating temperatures of up to 600°C. The different fabrication aspects, such as the metallization scheme, the etching of a 300μm deep cavity, and the bonding to a silicon carbide back plate are discussed in detail.
Publication Reference
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII (TRANSDUCERS and EUROSENSORS XXXIII), pp. 2154-2157
Year
2019