Silicon Carbide Pressure Sensors for Harsh Environments

dc.contributor.authorHoogerwerf, A. C.
dc.contributor.authorDurante, G. S.
dc.contributor.authorJames, R. J.
dc.contributor.authorDubois, M.
dc.contributor.authorDubochet, O.
dc.contributor.authorDespont, M.
dc.description.abstractThe paper describes the fabrication of a silicon carbide piezoresistive pressure sensors intended for operating temperatures of up to 600°C. The different fabrication aspects, such as the metallization scheme, the etching of a 300μm deep cavity, and the bonding to a silicon carbide back plate are discussed in detail.
dc.identifier.citation2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII (TRANSDUCERS and EUROSENSORS XXXIII), pp. 2154-2157
dc.subjectSilicon Carbide;SiC;Pressure sensor;high temperature;harsh environment;DRIE;Deep Reactive Ion Etching;SiC contact;metallization
dc.titleSilicon Carbide Pressure Sensors for Harsh Environments
dc.typeProceedings Article