High performances of very long (13.5mm) tapered laser emitting at 975 nm

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dc.contributor.authorResneau, Patrick
dc.contributor.authorGarcia, Michel
dc.contributor.authorLecomte, Michel
dc.contributor.authorRobert, Yannick
dc.contributor.authorVinet, Eric
dc.contributor.authorParillaud, Olivier
dc.contributor.authorKrakowski, Michel
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:08:00Z
dc.date.available2022-02-14T17:08:00Z
dc.date.issued2016-03-15
dc.description.abstractMode-locked semiconductor laser technology is a promising technology candidate considered by European Space Agency (ESA) for optical metrology systems and other space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement. For these applications, we have realised a multi-section monolithic-cavity tapered laser diode with a record cavity length of 13.5 mm. The laser operates at 975 nm wavelength. It is designed for the emission of ultra-short optical pulses (<1 ps) at a repetition rate of 3 GHz with an average optical power of 600 mW. It is based on a MOVPE grown laser structure with Aluminium free active region enabling high optical gain, low internal losses and low series resistance. The first results obtained under CW pumping of such centimetre-long laser at 20 °C heatsink temperature show the lasing threshold current as low as 1.27 A and the differential external efficiency as high as 0.55 W/A.
dc.identifier.citationNovel In-Plane Semiconductor Lasers XV, San Francisco, CA (USA), pp. 97671J
dc.identifier.doi10.1117/12.2209513
dc.identifier.urihttps://hdl.handle.net/20.500.12839/836
dc.identifier.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/9767/97671J/High-performances-of-very-long-135mm-tapered-laser-emitting-at/10.1117/12.2209513.short
dc.titleHigh performances of very long (13.5mm) tapered laser emitting at 975 nm
dc.typeProceedings Article
dc.type.csemdivisionsBU-I
dc.type.csemresearchareasPhotonics
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