A passivating contact for silicon solar cells formed during a single firing thermal annealing
| dc.contributor.author | Ingenito, A. | |
| dc.contributor.author | Nogay, G. | |
| dc.contributor.author | Jeangros, Q. | |
| dc.contributor.author | Rucavado, E. | |
| dc.contributor.author | Allebe, C. | |
| dc.contributor.author | Eswara, S. | |
| dc.contributor.author | et al. | |
| dc.date.accessioned | 2021-12-09T14:01:33Z | |
| dc.date.available | 2021-12-09T14:01:33Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative passivating contact that is formed in a single post-deposition annealing step called ''firing'', an essential step for current solar cell manufacturing. As firing is a fast (<10 s) and high-temperature (>750 degrees C) anneal, the required microstructural and electrical properties of the passivating contact are stringent. We demonstrate that tuning the carbon content of boron-doped silicon-based thin films inhibits firing-induced layer delamination without preventing a partial crystallization. The latter promotes charge-carrier selectivity, even in the absence of a diffused doped region beyond the oxide, by inducing hole accumulation near the wafer surface. We fabricated proof-of-concept solar cells employing the developed technology, demonstrating an open circuit voltage of 698 mV and an efficiency of 21.9%, and show how it could be a drop-in replacement for today''s rear contacts based on locally opened dielectric passivation stacks. | |
| dc.identifier.citation | Nature Energy, vol. 3 (9), pp. 800-808, Sep 2018. | |
| dc.identifier.doi | https://doi.org/10.1038/s41560-018-0239-4 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12839/260 | |
| dc.subject | chemical-vapor-deposition, selective rear contacts, si surface, passivation, crystalline-silicon, microcrystalline silicon, mass-production, glow-discharge, thin-films, hydrogen, interface, Energy and Fuels, Materials Science | |
| dc.title | A passivating contact for silicon solar cells formed during a single firing thermal annealing | |
| dc.type | Journal Article | |
| dc.type.csemdivisions | BU-V | |
| dc.type.csemresearchareas | Solar Cells and Modules |