22.8% Si-Solar Cells Using Sputtered polySi(n) Passivating Contacts and Direct Screen-Printing Metallization
No Thumbnail Available
Author
Diaz Leon, Juan José
Ingenito, Andrea
Allebé, Christophe
Libraro, Sofia
Ballif, Christophe
Nicolay, Sylvain
DOI
Abstract
Passivating contacts based on a thin silicon oxide/doped polysilicon stack and activated during a high temperature process (polySi) are increasingly adopted in industry thanks to their compatibility with mainstream solar cell processing and high performance potential. Efficiencies up to 24.9% have been shown for n-type poySi integrated at the rear side of PERT-like solar cells by solar cell manufacturers [1]. At this point, in-situ oxide along with single-sided deposition and doping are critical towards the industrialization of polySi-based solar cells. Herein, it will be shown how sputtering can be a high-throughput, low-cost solution for n-type polySi deposition, and the compatibility of sputtered polySi layers with direct metallization. PERT-like solar cells with sputtered n-type polySi at the back and contacted by direct metallization will be presented, showcasing the potential of this technology.
Publication Reference
EU PVSEC 2021, 2DV.3.3
Year
2023-09-01