A 1kb single-side read 6T sub-threshold SRAM in 180 nm with 530 Hz frequency 3.1 nA total current and 2.4 nA leakage at 0.27 V

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Pons, M.
Thanh-Chau Le, C.
Arm, C.
Severac, D.
A 1kb 180 nm single-side read 6T sub-threshold SRAM has been designed focusing on manufacturability, integrated and measured satisfactorily. Silicon measurements show 3.1 nA total current, 2.4 nA leakage, at 530 Hz for a minimum operating voltage of 0.27 V with no bit errors. The area of the block is 22'350 µm2.
Publication Reference
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE