1/f noise in external-cavity InGaN diode laser at 420  nm wavelength for atomic spectroscopy
| dc.contributor.author | Zeng, Xi | |
| dc.contributor.author | Boiko, Dmitri L. | |
| dc.date.accessioned | 2022-02-14T17:07:58Z | |
| dc.date.available | 2022-02-14T17:07:58Z | |
| dc.date.issued | 2014-03-15 | |
| dc.description.abstract | We have extensively studied the frequency noise and relative intensity noise spectra in a tunable external-cavity InGaN diode laser at blue (420 nm) wavelengths. We report flicker (1/f) frequency-noise behavior at low Fourier frequencies measured using offset frequency-absorption spectroscopy on Rb85 vapor cells, which yields an estimated lasing linewidth of 870 kHz. From considerations of high-dislocation density in III nitride epitaxy, 1/f noise and linewidth were expected to be larger than in conventional III-V lasers. Surprisingly, the measured noise characteristics are comparable to or better than those of near-infrared distributed feedback lasers and external-cavity diode lasers. The noise-reduction mechanism is attributed to the wavelength dependence of 1/f noise. We discuss challenges in atomic spectroscopy applications caused by defects and mode-clustering effect in GaN lasers. Using the Hakki–Paoli analysis in an aged laser diode, we provide possible explanation about the origin of observed mode clustering. | |
| dc.identifier.citation | Optics Letters, vol. 39 (6), pp. 1685-1688 | |
| dc.identifier.doi | 10.1364/OL.39.001685 | |
| dc.identifier.issn | 1539-4794 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12839/807 | |
| dc.identifier.url | https://www.osapublishing.org/ol/abstract.cfm?uri=ol-39-6-1685 | |
| dc.title | 1/f noise in external-cavity InGaN diode laser at 420  nm wavelength for atomic spectroscopy | |
| dc.type | Journal Article | |
| dc.type.csemdivisions | BU-I | |
| dc.type.csemresearchareas | Photonics |