A quantum-dot-based CMOS image sensor with direct X-ray conversion for nondestructive testing
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Author
Chun-Min , Zhang
Riccardo, Quaglia
Artem, Shulga
Vincent , Goossens
Paula, Blanca Cruz
Rémy , Vuagniaux
Pierre-François , Rüedi
DOI
Abstract
This paper presents the promising use of our newly developed X-ray image sensor in nondestructive test for industrial inspection. It consists of an absorber stack with a 120-μm layer of lead sulfide (PbS) colloidal quantum dots (CQDs) monolithically and directly deposited on a CMOS readout chip. This combination leverages both CMOS processes and PbS CQDs to achieve high X-ray absorption efficiency, thin-film integration, low power consumption, high pixel resolution, efficient readout electronics, and a 100% fill factor. To the best of our knowledge, this is the first direct X-ray CMOS image sensor that utilizes PbS CQDs to convert X-rays directly into electrical signals, which are then processed by CMOS readout circuitry for efficient signal handling.
Publication Reference
2025 International Image Sensor Workshop, Hyogo, Japan
Year
2025-06-05
Sponsors
This work has received funding from the Clean Sky 2 Joint Undertaking program under grant agreement No. 887192 and the Swiss State Secretariat for Education, Research, and Innovation (SERI) under the Swiss-Chips initiative.