Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells
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Author
Walter, Arnaud
Kamino, Brett A.
Moon, Soo-Jin
Wyss, Patrick
Diaz Leon, Juan J.
Allebé, Christophe
Descoeudres, Antoine
Nicolay, Sylvain
Ballif, Christophe
Jeangros, Quentin
DOI
10.1039/d3ya00048f
Abstract
Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm2 active area and the front electrode was screen-printed. © 2023 RSC.
Publication Reference
Energy Advances Volume 2, Issue 11, p. 1818 - 1822
Year
2023-09-26