Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells
No Thumbnail Available
Author
Walter, Arnaud
Kamino, Brett A.
Moon, Soo-Jin
Wyss, Patrick
Diaz Leon, Juan J.
Allebé, Christophe
Descoeudres, Antoine
Nicolay, Sylvain
Ballif, Christophe
Jeangros, Quentin
Abstract
Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm2 active area and the front electrode was screen-printed. © 2023 RSC.
Publication Reference
Energy Advances Volume 2, Issue 11, p. 1818 - 1822
Year
2023-09-26