Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

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dc.contributor.authorWalter, Arnaud
dc.contributor.authorKamino, Brett A.
dc.contributor.authorMoon, Soo-Jin
dc.contributor.authorWyss, Patrick
dc.contributor.authorDiaz Leon, Juan J.
dc.contributor.authorAllebé, Christophe
dc.contributor.authorDescoeudres, Antoine
dc.contributor.authorNicolay, Sylvain
dc.contributor.authorBallif, Christophe
dc.contributor.authorJeangros, Quentin
dc.contributor.authorIngenito, Andrea
dc.date.accessioned2024-08-22T14:20:43Z
dc.date.available2024-08-22T14:20:43Z
dc.date.issued2023-09-26
dc.description.abstractSilicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm2 active area and the front electrode was screen-printed. © 2023 RSC.
dc.identifier.citationEnergy Advances Volume 2, Issue 11, p. 1818 - 1822
dc.identifier.doi10.1039/d3ya00048f
dc.identifier.issn27531457
dc.identifier.urihttps://hdl.handle.net/20.500.12839/1476
dc.language.isoen
dc.titleRear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells
dc.typeArticle
dc.type.csemdivisionsBU-V
dc.type.csemresearchareasSolar Cells and Module
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