Light-induced performance increase of silicon heterojunction solar cells
| dc.contributor.author | Kobayashi, E. | |
| dc.contributor.author | De Wolf, S. | |
| dc.contributor.author | Levrat, J. | |
| dc.contributor.author | Christmann, G. | |
| dc.contributor.author | Descoeudres, A. | |
| dc.contributor.author | Nicolay, S. | |
| dc.contributor.author | et al. | |
| dc.date.accessioned | 2021-12-09T13:14:56Z | |
| dc.date.available | 2021-12-09T13:14:56Z | |
| dc.date.issued | 2016 | |
| dc.description.abstract | Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si: H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si: H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented. Published by AIP Publishing. | |
| dc.identifier.citation | Applied Physics Letters, vol. 109 (15), p. 5, Oct 2016. | |
| dc.identifier.doi | https://doi.org/10.1063/1.4964835 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12839/96 | |
| dc.subject | hydrogenated amorphous-silicon, efficiency, defects, charge, wafers, Physics | |
| dc.title | Light-induced performance increase of silicon heterojunction solar cells | |
| dc.type | Journal Article | |
| dc.type.csemdivisions | BU-V | |
| dc.type.csemresearchareas | Solar Cells and Modules |